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| BF994S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance D Low input capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF994 Marking: MG Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 IG1/G2SM 10 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85008 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (7) BF994S Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, -VG1S = -VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF994S BF994SA BF994SB Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) 4 4 9.5 Min 20 6 Typ Max Unit V V V nA nA mA mA mA V V 20 20 50 50 18 10.5 18 2.5 2.0 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA Electrical AC Characteristics VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps Min 15 Typ 18.5 2.5 1.2 25 1.0 25 50 1.0 Max 3.0 35 1.3 Unit mS pF pF fF pF dB dB dB VG1S = 0, VG2S = 4 V GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to -2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz DGps F www.vishay.de * FaxBack +1-408-970-5600 2 (7) Document Number 85008 Rev. 3, 20-Jan-99 BF994S Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) 250 ID - Drain Current ( mA ) 200 150 100 50 0 0 96 12159 22 20 18 16 14 12 10 8 6 4 2 0 20 40 60 80 100 120 140 160 12852 5V VDS= 15V 4V 3V 2V 1V 0 VG1S= -1V -1 -0.5 0.0 0.5 1.0 1.5 Tamb - Ambient Temperature ( C ) VG2S - Gate 2 Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature 32 28 ID - Drain Current ( mA ) 24 20 16 0 12 8 4 VG1S= -1V 0 0 12849 Figure 4. Drain Current vs. Gate 2 Source Voltage 4.0 VG2S= 4V Ptot=200mW C issg1 - Gate 1 Input Capacitance ( pF ) 2V 1.5V 1V 0.5V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -1 VDS=15V VG2S=4V f=1MHz -0.5V 2 4 6 8 10 12 14 16 12853 -0.5 0.0 0.5 1.0 1.5 VDS - Drain Source Voltage ( V ) ID - Drain Current ( mA ) Figure 2. Drain Current vs. Drain Source Voltage 22 20 18 ID - Drain Current ( mA ) 16 14 12 10 8 6 4 2 0 -1 12851 Figure 5. Gate 1 Input Capacitance vs. Drain Current 3.0 C issg2 - Gate 2 Input Capacitance ( pF ) 6V 5V 4V 3V VDS= 15V 2V 1V 2.5 2.0 1.5 1.0 0.5 0 -2 -1 0 1 2 VDS=15V VG1S=0 f=1MHz 0.5V 0 VG2S= -1V -0.5 0.0 0.5 1.0 1.5 3 4 5 VG1S - Gate 1 Source Voltage ( V ) 12854 VG2S - Gate 2 Source Voltage ( V ) Figure 3. Drain Current vs. Gate 1 Source Voltage Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage Document Number 85008 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (7) BF994S Vishay Telefunken 2.0 C oss - Output Capacitance ( pF ) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 12856 12 VG2S=4V f=1MHz Im ( y ) ( mS ) 11 f=700MHz 10 8 6 4 2 50MHz 0 2 4 6 8 10 12 14 16 18 20 12860 600MHz 500MHz 400MHz 300MHz 200MHz VDS=15V VG2S=4V ID=10mA f=50...700MHz 1.5 2.0 2.5 3.0 0 0.5 1.0 VDS - Drain Source Voltage ( V ) Re (y11) ( mS ) Figure 7. Output Capacitance vs. Drain Source Voltage 10 - Transducer Gain ( dB ) 0 -10 -20 -30 -40 -50 -60 -2.0 -1.5 -1.0 -0.5 0.0 12855 Figure 10. Short Circuit Input Admittance 0 -4 Im ( y ) ( mS ) 21 -8 -12 -16 -20 f=50MHz 150MHz 300MHz 500MHz 700MHz ID=5mA 10mA 20mA VDS=15V VG2S=4V f=50...700MHz f= 200MHz 4V 3V 2V 1V 0 -0.2V -0.4V -0.6V -0.8V VG2S=-1V S 21 2 0.5 1.0 1.5 2.0 12861 0 2 4 6 8 10 12 14 16 18 20 22 Re (y21) ( mS ) VG1S - Gate 1 Source Voltage ( V ) Figure 8. Transducer Gain vs. Gate 1 Source Voltage y21s - Forward Transadmittance ( mS ) 20 18 16 14 12 10 8 6 4 2 0 0 12850 Figure 11. Short Circuit Forward Transfer Admittance 4.0 3.5 3.0 Im ( y ) ( mS ) 22 2.5 2.0 1.5 1.0 f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz VDS=15V VG2S=4V ID=10mA f=50...700MHz 1.2 1.6 2.0 VDS=15V f=1MHz 4V 3V 2V 1V VG2S=0 2 4 6 8 10 12 14 0.5V 16 18 12862 0.5 0 0 50MHz 0.4 0.8 ID - Drain Current ( mA ) Re (y22) ( mS ) Figure 9. Forward Transadmittance vs. Drain Current Figure 12. Short Circuit Output Admittance www.vishay.de * FaxBack +1-408-970-5600 4 (7) Document Number 85008 Rev. 3, 20-Jan-99 BF994S Vishay Telefunken VDS = 15 V, ID = 10 mA, VG2S = 4 V , Z0 = 50 W S11 j 120 j0.5 j2 150 j0.2 j5 200 700MHz 30 S12 90 60 0 0.2 0.5 1 2 5 50 1 50 180 0.08 0.16 0 -j0.2 12 964 S21 90 120 60 150 200 50 -j0.2 -150 -30 -120 12 966 -60 -90 12 967 Figure 14. Forward transmission coefficient Document Number 85008 Rev. 3, 20-Jan-99 AAAAAAAAAA AA 180 AAAAAAAAAA A AAAAAAAAAA A 450 700MHz -j0.5 -j -j2 450 700MHz 1 2 200 -j5 -150 -30 -120 12 965 -60 -90 Figure 13. Input reflection coefficient Figure 15. Reverse transmission coefficient S22 j j0.5 30 j0.2 j5 j2 0 0 0.2 0.5 1 2 5 50 1 700MHz -j5 -j0.5 -j -j2 Figure 16. Output reflection coefficient www.vishay.de * FaxBack +1-408-970-5600 5 (7) BF994S Vishay Telefunken Dimensions in mm 96 12240 www.vishay.de * FaxBack +1-408-970-5600 6 (7) Document Number 85008 Rev. 3, 20-Jan-99 BF994S Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85008 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (7) |
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